TP65H150G4LSG Single FETs, MOSFETs

TP65H150G4LSG

Product classification

Single FETs, MOSFETs

Manufacturer

Transphorm

Type

GAN FET N-CH 650V PQFN

Encapsulation

Package

Tray

RoHS

Price

$5.0600

Available options

Quantity

Stock : 0

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Specifications

TYPE	DESCRIPTION
Mfr	Transphorm
Series	-
Package	Tray
Product Status	ACTIVE
Package / Case	3-PowerTDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	13A (Tc)
Rds On (Max) @ Id, Vgs	180mOhm @ 8.5A, 10V
Power Dissipation (Max)	52W (Tc)
Vgs(th) (Max) @ Id	4.8V @ 500µA
Supplier Device Package	3-PQFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	598 pF @ 400 V