IRF830AS Single FETs, MOSFETs

Specifications

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TYPE	DESCRIPTION
Mfr	Vishay / Siliconix
Series	-
Package	Tube
Product Status	OBSOLETE
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Rds On (Max) @ Id, Vgs	1.4Ohm @ 3A, 10V
Power Dissipation (Max)	3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	TO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)	10V
Vgs (Max)	±30V
Drain to Source Voltage (Vdss)	500 V
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	620 pF @ 25 V