| TYPE | DESCRIPTION |
| Mfr | International Rectifier |
| Series | HEXFET® |
| Package | Bulk |
| Product Status | ACTIVE |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.95mOhm @ 20A, 10V |
| Power Dissipation (Max) | 3.6W (Ta), 59W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 50µA |
| Supplier Device Package | 8-PQFN (5x6) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3610 pF @ 10 V |
