HN1B04FE-GR,LXHF Bipolar Transistor Arrays

HN1B04FE-GR,LXHF

Product_Category

Bipolar Transistor Arrays

Manufacturer

Toshiba Electronic Devices and Storage Corporation

Type

AUTO AEC-Q PNP + NPN TR VCEO:-50

Encapsulation

Packages

Tape & Reel (TR)

RoHS

Price

$0.4400

Specifications

PDF(1)

TYPE	DESCRIPTION
Mfr	Toshiba Electronic Devices and Storage Corporation
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	SOT-563, SOT-666
Mounting Type	Surface Mount
Transistor Type	1 NPN, 1 PNP
Operating Temperature	150°C (TJ)
Power - Max	100mW
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Frequency - Transition	80MHz
Supplier Device Package	ES6
Grade	Automotive
Qualification	AEC-Q101

$0.0400

$0.3400

$0.0500

$0.0400

$0.6500