CGD65B200S2-T13 Single FETs, MOSFETs

Specifications

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TYPE	DESCRIPTION
Mfr	Cambridge GaN Devices
Series	ICeGaN™
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerVDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	8.5A (Tc)
Rds On (Max) @ Id, Vgs	280mOhm @ 600mA, 12V
FET Feature	Current Sensing
Vgs(th) (Max) @ Id	4.2V @ 2.75mA
Supplier Device Package	8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)	9V, 20V
Vgs (Max)	+20V, -1V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	1.4 nC @ 12 V